New Optical Memory Structure Using Self-Assembled InAs Quantum Dots

作者: Kenichi Imamura , Yoshihiro Sugiyama , Yoshiaki Nakata , Shunichi Muto , NaokiYokoyama

DOI: 10.1143/JJAP.34.L1445

关键词: Binary compoundPhotocurrentSelf assembledOptical memoryQuantum dotOpticsRetention timeOptoelectronicsSchottky diodeChemistry

摘要: We propose a new optical memory structure using self-assembled InAs quantum dots (QDs) for possible applications to wavelength-domain-multiplication memory, which should lead increase density. Data stored in this can be read photocurrent and then erased electrically. In preliminary study, we confirmed the effect of caused by QDs first time. A retention time 0.48 ms was obtained at 300 K.

参考文章(2)
R. C. Miller, D. A. Kleinman, W. A. Nordland, A. C. Gossard, Luminescence studies of optically pumped quantum wells in GaAs- Al x Ga 1 − x As multilayer structures Physical Review B. ,vol. 22, pp. 863- 871 ,(1980) , 10.1103/PHYSREVB.22.863
J. -Y. Marzin, J. -M. Gérard, A. Izraël, D. Barrier, G. Bastard, Photoluminescence of single InAs quantum dots obtained by self-organized growth on GaAs. Physical Review Letters. ,vol. 73, pp. 716- 719 ,(1994) , 10.1103/PHYSREVLETT.73.716