A New Instability in MOS Transistor Caused by Hot Electron and Hole Injection from Drain Avalanche Plasma into Gate Oxide

摘要: Results of an experimental study are reported a new instability found in p- and n-channel MOS transistors. This phenomenon is that when higher voltage excess brakdown applied to the drain electrode breakdown drifts value current also increases. The origin this investigated by extensive measurements analyses electrical characteristics It concluded 1) semiconductor surface near becomes p-like p-channel transistors n-like thus active channel length shortened, 2) caused charging gate oxide due injection electrons or holes generated during avalanche breakdown, 3) electron hole much affected electric field across over junction.