Structural and magnetic properties of ZnFe 2 O 4 films deposited by low sputtering power

摘要: To validate the correctness of Hartman-Perdok Theory (HPT), which indicates that {111} planes have lowest surface energy in spinel ferrites, plane orientated ZnFe2O4 thin films on Si(100), Si(111), and SiO2(500 nm)/Si(111) substrates were obtained through a radio frequency (RF) magnetron sputtering method with low power 80 W. All experiments prove atom determined by plays an important role growth films, it matches well HPT. The exhibit ferromagnetism magnetization 84.25 kJ/mol at room temperature, is different from bulk counterpart (antiferromagnetic as usual). can be used high-quality oriented inducing buffer layers for other (Ni, Mn)Zn ferrite may high potential magnetic films-based devices.