An N2-compatible Ni0 Metal–Organic Chemical Vapor Deposition (MOCVD) Precursor
作者： Viet-Ha Tran , Takeshi Yatabe , Takahiro Matsumoto , Hidetaka Nakai , Kazuharu Suzuki
DOI: 10.1246/CL.150155
关键词: Hybrid physical-chemical vapor deposition 、 Metal 、 Chemical vapor deposition 、 Metalorganic vapour phase epitaxy 、 Chemical engineering 、 Nickel 、 Combustion chemical vapor deposition 、 Chemistry
摘要: We report the first example of a Ni0 precursor that provides contamination-free (<1%) nickel film by metal–organic chemical vapor deposition (MOCVD) using N2 as carrier gas. The structure and...
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T. Kada, M. Ishikawa, H. Machida, A. Ogura, Y. Ohshita, K. Soai, Volatile CVD precursor for Ni film: cyclopentadienylallylnickel Journal of Crystal Growth. ,vol. 275, ,(2005) , 10.1016/J.JCRYSGRO.2004.11.198
Dirk Walther, Thomas Klettke, Andreas Schmidt, Helmar Görls, Wolfgang Imhof, SYNTHESIS, PROPERTIES, AND SOLID-STATE STRUCTURES OF BIS(ALKYNE)METAL(0) COMPLEXES (METAL = NI, PT) WITH SUBSTITUTED ALKYNEDIOLS AND ALKYNOLS Organometallics. ,vol. 15, pp. 2314- 2319 ,(1996) , 10.1021/OM950896U
F. Fau-Canillac, F. Maury, Control of the uniformity of thickness of Ni thin films deposited by low pressure chemical vapor deposition Surface and Coatings Technology. ,vol. 64, pp. 21- 27 ,(1994) , 10.1016/S0257-8972(09)90081-0
J. R. Vargas Garcia, Takashi Goto, Chemical Vapor Deposition of Iridium, Platinum, Rhodium and Palladium Materials Transactions. ,vol. 44, pp. 1717- 1728 ,(2003) , 10.2320/MATERTRANS.44.1717
R. Goddard, B. Apotecher, H. Hoberg, Structure of (cycloocta‐1,5‐diene)(tolan)nickel Acta Crystallographica Section C-crystal Structure Communications. ,vol. 43, pp. 1290- 1293 ,(1987) , 10.1107/S0108270187092138
Marino Basato, Elena Faggin, Cristina Tubaro, Augusto Cesare Veronese, Volatile square planar β-imino carbonyl enolato complexes of Pd(II) and Ni(II) as potential MOCVD precursors Polyhedron. ,vol. 28, pp. 1229- 1234 ,(2009) , 10.1016/J.POLY.2009.02.017
Dirk Walther, Thomas Klettke, Helmar Görls, Wolfgang Imhof, Homoleptische Alkin—Nickel(0) Komplexe: Kombination von Nickel(0) Zentren mit Alkinylsilanen Rn1Si(-C≡C-R2)4−n zu nickelorganischen Analoga von Siloxanen Journal of Organometallic Chemistry. ,vol. 534, pp. 129- 137 ,(1997) , 10.1016/S0022-328X(96)06922-7
Masato Ishikawa, Takeshi Kada, Hideaki Machida, Yoshio Ohshita, Atsushi Ogura, Ni Precursor for Chemical Vapor Deposition of NiSi Japanese Journal of Applied Physics. ,vol. 43, pp. 1833- 1836 ,(2004) , 10.1143/JJAP.43.1833
Hyungsoo Choi, Sungho Park, Tae Hyung Kim, Novel Nickel Precursors for Chemical Vapor Deposition Chemistry of Materials. ,vol. 15, pp. 3735- 3738 ,(2003) , 10.1021/CM034210X
Jingyu Park, Heeyoung Jeon, Hyunjung Kim, Woochool Jang, Chunho Kang, Junhan Yuh, Hyeongtag Jeon, Effect of a Ti capping layer on thermal stability of NiSi formed from Ni thin films deposited by metal–organic chemical vapor deposition using a Ni(iPr-DAD)2 precursor Japanese Journal of Applied Physics. ,vol. 54, pp. 025501- ,(2015) , 10.7567/JJAP.54.025501