Effect of Antenna-Substrate Distance on Quality of a-Si:H During ICP CVD Using a Flat Spiral Antenna

摘要: Amorphous silicon (a-Si:H) thin films are deposited on substrates by inductively coupled plasma chemical vapor deposition (ICP-CVD) using a flat spiral antenna and SiH4 as the precursor gas. The at operating pressure of 20 mTorr 50-W radio frequency (13.56 MHz) power fed to antenna. Films varying distance ( $d_{s}$ ) between dielectric (quartz) plate that isolates from chamber substrate location. Diagnostics Argon generated under similar experimental conditions performed RF compensated Langmuir probe get an idea about variation in parameters (plasma density, electron temperature, potential) along axial direction (with increase ). characterized for their thickness various physical electronic properties. It is observed there exists discernible dependence film characteristics coil also found correlation microstructural optoelectronic properties well defect density with distance. An attempt has been made correlate these observations studied probe.