作者: Takehito Hori , Shunji Ozaki
DOI: 10.1063/1.4803892
关键词: Spectral line 、 Molecular physics 、 Band gap 、 Thermal expansion 、 Chalcopyrite 、 Infrared spectroscopy 、 Semiconductor 、 Spectroscopy 、 Chemistry 、 Absorption (electromagnetic radiation) 、 Analytical chemistry
摘要: Optical absorption and photoreflectance (PR) spectra have been measured on the single-crystalline chalcopyrite semiconductor AgGaSe2 for light polarization perpendicular (E ⊥ c) parallel to c-axis (E ‖ c) at T = 15–300 K. measurements suggest that is a direct-gap having an optical band gap of E0 ∼ 1.8 eV The temperature-dependent PR are obtained T = 20–300 K in 1.8–2.5 eV spectral ranges. lowest band-gap energy shows unusual temperature dependence T ≤ 80 K. resultant coefficients dE0/dT positive T ≤ 70 K negative above 70 K, explained by considering effects thermal expansion electron-phonon interaction. spin-orbit crystal-field splitting parameters also determined be Δso = 327 meV Δcr = −288 meV T = 20 K, respectively.