作者: Stefano Piersanti , Francesco de Paulis , Antonio Orlandi , Madhavan Swaminathan , Vittorio Ricchiuti
DOI: 10.1109/TEMC.2015.2414477
关键词: Materials science 、 Transient analysis 、 Transient voltage suppressor 、 Capacitance 、 Nonlinear system 、 Equivalent circuit 、 Silicon 、 Electric potential 、 Electronic engineering 、 Optoelectronics 、 Doping
摘要: An equivalent circuit model for the transient analysis of through-silicon vias (TSV) taking into account nonlinear metal–oxide–semiconductor effects is proposed. The takes behavior doped silicon substrate in presence electric potential difference due to voltage between TSVs. impact time-variant capacitance via and on crosstalk signal propagation analyzed.