Method for detecting alpha particles in SOI technology
作者： Ethan H. Cannon , Timothy D. Sullivan , Michael J. Hauser
DOI:
关键词: Particle detector 、 Silicon on insulator 、 Engineering 、 Transistor 、 Alpha particle 、 Node (circuits) 、 Signal 、 Electrical engineering 、 Charge (physics) 、 Detector
摘要: The invention relates to a method of detecting alpha particles in SOI technology and circuit thereof. structure is silicon-on-insulator radiation detector which includes: charge collection node; precharge transistor that has source from the node, drain at Vdd, gate controlled by signal; an access connecting readout read-out pulldown having ground, grounded gate.
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