Deep-level optical spectroscopy investigation of N-doped TiO2 films
作者： Yoshitaka Nakano , Takeshi Morikawa , Takeshi Ohwaki , Yasunori Taga
DOI: 10.1063/1.1896450
关键词: Vacancy defect 、 Deep-level transient spectroscopy 、 Materials science 、 Doping 、 Analytical chemistry 、 Sputter deposition 、 Atomic physics 、 Wide-bandgap semiconductor 、 X-ray photoelectron spectroscopy 、 Sputtering 、 Spectroscopy
摘要: N-doped TiO2 films were deposited on n+-GaN∕Al2O3 substrates by reactive magnetron sputtering and subsequently crystallized annealing at 550 °C in flowing N2 gas. The N-doping concentration was ∼8.8%, as determined from x-ray photoelectron spectroscopy measurements. Deep-level optical measurements revealed two characteristic deep levels located ∼1.18 ∼2.48eV below the conduction band. 1.18 eV level is probably attributable to O vacancy state can be active an efficient generation-recombination center. Additionally, 2.48 band newly introduced N doping contributes band-gap narrowing mixing with O2p valence
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