作者: Qiang Fu , Thomas Wagner
DOI: 10.1016/J.SUSC.2004.11.007
关键词: Analytical chemistry 、 Microelectronics 、 Fermi energy 、 Chemistry 、 Chemical physics 、 Electronic structure 、 Chemical reaction 、 Oxide 、 Space charge 、 Fermi level 、 Band gap 、 Materials Chemistry 、 Surfaces, Coatings and Films 、 Surfaces and Interfaces 、 Condensed matter physics
摘要: Abstract The model system Cr/SrTiO3 was used to show how interfacial reactions can be tuned over a temperature range of several hundred Kelvin by distinct modification the electronic structure in oxide. This mechanism unveils dominant role Fermi energy level (EF) oxide’s band gap for and understood interplay between outward diffusion oxygen ions space charges formed at interfaces. results suggest that reactivity is tunable modifying EF oxide, which will decisive present future applications fields sensors, catalysis microelectronics.