Growth of C60 films on silicon surfaces
作者： Dong Chen , Dror Sarid
DOI: 10.1016/0039-6028(94)90342-5
关键词: Molecule 、 Crystallography 、 Chemistry 、 Atomic force microscopy 、 Scanning tunneling microscope 、 Annealing (metallurgy) 、 Monolayer 、 Silicon
摘要: Abstract The growth of crystalline C 60 films on Si(111) and Si (100) surfaces has been studied using scanning tunneling microscopy atomic force microscopy. It is found that the these two silicon substrates, which consist both partially ordered monolayer islands, differ in their morphologies. results are explained terms relative strength interaction first molecules with substrate islands above it. Annealing samples to elevated temperatures causes evaporate, leaving a full layer capped substrate.
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