3C SiC(001) surface structure studied by angular resolved photoelectron spectroscopy and reflectance anisotropy spectroscopy
作者： M Lübbe , K Lindner , U Rossow , D.R.T Zahn
DOI: 10.1016/S0925-9635(98)00410-5
关键词: Materials science 、 Silicon carbide 、 Analytical chemistry 、 Low-energy electron diffraction 、 X-ray photoelectron spectroscopy 、 Silicon 、 Electronic band structure 、 Angle-resolved photoemission spectroscopy 、 Spectroscopy 、 Anisotropy
摘要: Abstract We present a study of the (3×2) and c(2×2) reconstructed (001) surfaces cubic (3C) silicon carbide (SiC) using angular resolved photoelectron spectroscopy (ARUPS) reflectance anisotropy/difference (RAS/RDS). The carbon terminated structure which is characterized by additional (Si) dimers on Si surface were prepared annealing sample in flux. Afterwards geometric structures confirmed low energy electron diffraction. Comparing ARUPS data both reconstructions related features identified their dispersion reciprocal space was determined. RAS also show strong feature attributed to surface. position known V2 photoemission SiC(3×2) suggests location corresponding electronic states ad-layer surface-dimers. This assignment supported comparing results obtained gallium arsenide.
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