Nonvolatile semiconductor storage device and method of manufacture thereof
作者： Toshitake Yaegashi
DOI:
关键词: Gate length 、 Electrode 、 Semiconductor storage 、 Substrate (electronics) 、 Gate oxide 、 Electrical engineering 、 Gate dielectric 、 Layer (electronics) 、 Optoelectronics 、 Materials science 、 Metal gate
摘要: A nonvolatile semiconductor storage device including a number of memory cells formed on substrate, each the has tunnel insulating film, charge layer, block and gate electrode which are in sequence substrate. The is structured such that at least first second layers stacked. dimension direction length smaller than layer.
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