作者: Bing Fong Ma
DOI:
关键词: Power semiconductor device 、 Threshold voltage 、 Multiple-emitter transistor 、 Bipolar junction transistor 、 Transistor 、 Engineering 、 Rectifier 、 Static induction transistor 、 Voltage 、 Electronic engineering 、 Electrical engineering
摘要: A boost DC-DC converter with a synchronous composite rectifier is presented. The limits inductive in-rush current, includes shutdown mode, operates also in step-down and can be fabricated using conventional bipolar processes. power NPN transistor lateral PNP transistor. During start-up mode (when the output voltage less than input voltage), drives biased such that volt-second balance maintained, limiting current. In higher disabled driven into saturation. Again, maintained.