Growth of untwinned Bi2Sr2Ca2Cu3Oxthin films by atomically layered epitaxy
作者： J. N. Eckstein , I. Bozovic , D. G. Schlom , J. S. Harris
DOI: 10.1063/1.104278
关键词: Diffraction 、 Epitaxy 、 Crystal growth 、 Mineralogy 、 Thin film 、 Reflection high-energy electron diffraction 、 Electron diffraction 、 Substrate (electronics) 、 Materials science 、 X-ray crystallography 、 Condensed matter physics
摘要: We report the growth of untwinned epitaxial thin films Bi‐Sr‐Ca‐Cu‐O by atomically layered heteroepitaxy on SrTiO3 substrates. These are c‐axis oriented as‐layered and do not exhibit 90° in‐plane defects, i.e., a‐b ‘‘twinning.’’ By misorienting surface normal from {100} approximately 4° towards 〈111〉, cubic symmetry is adequately broken to completely align b axis superconducting film with respect substrate. Reflection high‐energy electron diffraction patterns observed during post‐growth x‐ray analysis indicate that incommensurate structural modulation occurs along same direction as step edges.
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