Sn-Te-Se Phase Change Recording Film For Optical Disks

摘要: Sn-Te-Se amorphous-crystalline phase change recording film is analyzed on write/erase cyclability, erasing speed, and activation energy of crystallization. The thin film, sandwiched by two SiO2 layers, deposited an organic-thick-film coated glass substrate. Then, another organic thick onto these layers. For samples, the maximum erasure(crystallization) speed laser beam irradiation other characteristics are measured. Information can be written erased more than 106 times. crystallization also measured found to about 2.3eV. life amorphous state estimated 10 years at 40°C. These experimental results show that promising as a reversible film.