Modeling of microwave top illuminated PIN photodetector under very high optical power
作者： J. Harari , G.H. Jin , F. Journet , J. Vandecasteele , J.P. Vilcot
DOI: 10.1109/22.536032
关键词: Biasing 、 Voltage 、 Optoelectronics 、 Microwave 、 Physics 、 Photodetector 、 Optics 、 Responsivity 、 Photodiode 、 Equivalent circuit 、 Optical power
摘要: In this paper, we present a theoretical study and numerical simulation of classical long wavelength top illuminated PIN photodetector for microwave applications under very high optical power. The modeling includes monodimensional drift-diffusion model the device takes into account external circuit. At first, is validated using experimental results from literature. Second, consider InP-GaInAs-InP photodiode grown on an N/sup +/ InP substrate. presented show that distortion saturation signal at 20 GHz are due to space charge effect in also depolarization because main parameters influencing these phenomena power, bias voltage, spot width modulation depth. case small spot, circuit neglectable, while it contributes decrease responsivity large spot. maximum output power calculated different cases can expect up 12 dBm 5 V reverse voltage.
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