Mixed alkoxy precursors and methods of their use for rapid vapor deposition of SiO2 films
作者： George D. Papasouliotis , Dennis M. Hausmann , Raihan M. Tarafdar , Ron Rulkens , Jeff Tobin
DOI:
关键词: Hybrid physical-chemical vapor deposition 、 Substrate surface 、 Silicon 、 Dielectric 、 Chemical engineering 、 Alkoxy group 、 Chemical vapor deposition 、 Organic chemistry 、 Materials science 、 Layer (electronics)
摘要: A method employing rapid vapor deposition (RVD) deposits a dielectric material on small features of substrate surface. The resulting film is thicker, faster growing, shows better gap fill performance and has improved properties compared to films from silicon precursors with identical alkoxy substituents silicon. includes the following two principal operations: exposing surface metal-containing precursor gas form substantially saturated layer surface; mixed alkoxy-substituted silicon-containing film.
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