Improvement in Crystalline Quality of InGaN-Based Epilayer on Sapphire via Nanoscaled Epitaxial Lateral Overgrowth
作者： Ching-Hsueh Chiu , Da-Wei Lin , Zhen-Yu Li , Chin-Hua Chiu , Chu-Li Chao
关键词: Surface roughness 、 Sapphire 、 Chemical vapor deposition 、 Epitaxy 、 Dislocation 、 Optoelectronics 、 Photoluminescence 、 Transmission electron microscopy 、 Quantum efficiency 、 Materials science 、 General Engineering 、 General Physics and Astronomy
摘要: In this study, a high-performance GaN-based light-emitting diode (LED) was achieved using nanocolumn patterned sapphire substrate (NCPSS) with low-pressure metal-organic chemical vapor deposition (LP-MOCVD). The surface roughness evaluated by atomic force microscopy (AFM). mechanisms of carrier localization in the LED fabricated on NCPSS were discussed referring to results obtained from power-dependent photoluminescence measurements. Moreover, transmission electron (TEM) image, threading dislocation densities (TDDs) through found be about 10 times lower than those planar substrates. Finally, internal quantum efficiency (IQE) as high 48% at 30 mW, corresponding current 20 mA, which is higher that 8%. use suggested effective for elevating emission owing an improvement crystal quality.
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