Programmable cell for use in programmable electronic arrays

摘要: An improved programmable cell for use in electronic arrays such as PROM devices, logic arrays, gate and die interconnect arrays. The cells have a highly non-conductive state settable non-resettable into conductive state. resistance of 10,000 ohms or more the which are by threshold voltage 10 volts less, current 25 milliamps 100 microseconds less. maximum permittable processing temperature 400° centigrade storage 175° more. formed from doped silicon alloys including at least hydrogen and/or fluorine contain about 0.1 to 5 percent dopant. can be plasma deposited silane tetrafluoride with 20 150,000 ppm Each an array is thin film includes isolating device bipolar MOS diode transistor. associated addressing circuitry also conventional devices devices. area less than one square mil provide high packing density.