Characterization of silicon photodiode detectors with multilayer filter coatings for 17 to 150 A
作者： John F. Seely , Raj S. Korde , Frederick A. Hanser , J. Wise , Glenn E. Holland
DOI: 10.1117/12.371077
关键词: Optoelectronics 、 Wavelength 、 Transmittance 、 Optics 、 Silicon 、 Materials science 、 Optical coating 、 Deposition (law) 、 Thin layers 、 Synchrotron radiation 、 Photodiode
摘要: Silicon photodiode detectors with multilayer coatings were characterized using synchrotron radiation. The composed of thin layers metals and other materials designed to provide wavelength bandpasses in the 17 - 150 angstrom region. measured transmittances are good agreement calculated transmittances. modeling accounts for transmittance coating deposition radiation energy underlying silicon photodiode. Detectors following layer (and characterized: Fe/Al (17 30 angstrom), Mn/Al (19 Angstrom), V/Al (24 35 Ti/C (27 40 Pd/Ti 50 Ti/Zr/Al Ag/CaF2/Al (36 Ti/Mo/C (50 angstrom).© (1999) COPYRIGHT SPIE--The International Society Optical Engineering. Downloading abstract is permitted personal use only.
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