Composition of Ge(Si) islands in the growth of Ge on Si(111) by x-ray spectromicroscopy
作者： Fulvio Ratto , Federico Rosei , Andrea Locatelli , Salia Cherifi , Stefano Fontana
DOI: 10.1063/1.1832747
关键词: Self-diffusion 、 Stoichiometry 、 Germanium 、 Photoemission electron microscopy 、 Analytical chemistry 、 Quantum dot 、 Nanostructure 、 Materials science 、 Heterojunction 、 Diffusion
摘要: The stoichiometry of Ge∕Si islands grown on Si(111) substrates at temperatures ranging from 460to560°C was investigated by x-ray photoemission electron microscopy (XPEEM). By developing a specific analytical framework, quantitative information the surface extracted laterally resolved XPEEM Si 2p and Ge 3d spectra, exploiting chemical sensitivity technique. Our data show existence correlation between base area self-assembled their average content: larger lateral dimensions 3D structures, higher relative concentration. deposition temperature determines characteristics this relation, pointing to thermal activation kinetic diffusion processes.
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