Design of active phase shifters based on multichannel heterojunction field effect transistors (MCHFET's)
作者： M. Nawaz , G.U. Jensen
DOI: 10.1109/16.543009
关键词: Differential phase 、 Equivalent circuit 、 Field-effect transistor 、 Physics 、 Scattering parameters 、 Continuous phase modulation 、 Phase (waves) 、 Electrical engineering 、 Noise figure 、 Gallium arsenide 、 Optoelectronics
摘要: Design criteria of active phase shifters based on GaAs/AlGaAs multichannel (MC) HFET in the frequency range 4-60 GHz are presented. The characteristics MCHFET devices were studied using computer aided design program TOUCHSTONE. dependence transmission various intrinsic elements equivalent circuit model as a function control gate bias was also studied. There limited ranges which correspond to regions two conducting wells for quasi-linear continuous shift analog applications achieved. Continuously varying from V/sub gs/=-1.9 V gs/=-0.6 results quasilinear 10/spl deg/, 15/spl 21/spl and 29/spl deg/ at f=12, 20, 30, 60 GHz, respectively. Similarly, gs/=-0.4 gs/=0.7 26/spl 27/spl 23/spl respectively, gain variation less than 3 dB these regions. With digital mind, maximum differential around 50/spl obtained by switching discretely. single mostly depends source capacitance with rather other elements. geometrical structural parameters is To test practicality device, scattering (e.g., S/sub 11/, 22/, 12/) noise figure (NF) finally
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