作者: Jai Singh , A Thilagam
DOI: 10.1016/0022-2313(88)90280-3
关键词: Atomic physics 、 Biexciton 、 Impurity 、 Trapping 、 Naphthalene 、 Phonon 、 Doping 、 Chemistry 、 Exciton
摘要: Abstract Rates of exciton trapping at isotopic impurities acting as deep trap centres in molecular crystals are derived. The excess energy is emitted the form phonons. calculated for doped naphthalene and results discussed possible applications.