Orientation-dependent stress relaxation in hetero-epitaxial 3C-SiC films

摘要: Residual stresses in epitaxial 3C-SiC films on silicon, for chosen growth conditions, appear determined by their orientation. Stress evaluation locally with Raman spectroscopy, and across a 150 mm wafer curvature measurements, indicate that thin can be grown Si(100) residual tensile as low 150 MPa. However, Si(111) retain considerably higher stress, around 900 MPa, only minor decrease versus film thickness. Stacking faults are indeed geometrically less efficient relief mechanism the biaxial strain of SiC 〈111〉 tuned process temperatures.