Inverse-Tapered p-Waveguide for Vertical Hole Transport in High-[Al] AlGaN Emitters
作者： Yuh-Shiuan Liu , Tsung-Ting Kao , Mahbub Satter , Zachary Lochner , Shyh-Chiang Shen
关键词: Inverse 、 Epitaxy 、 Current density 、 Omega 、 Wide-bandgap semiconductor 、 Condensed matter physics 、 Optoelectronics 、 Materials science 、 Equivalent series resistance 、 Ultraviolet 、 Common emitter
摘要: We report a high-aluminum-containing ([Al] $\,\,{\sim }\,\,0.6$ ) AlGaN multiple-quantum well (MQW) double-heterojunction (DH) emitter employing an inverse-tapered-composition AlGaN:Mg p-type waveguide grown on $c$ plane Al-polar AlN bulk substrate. Using numerical simulations, we have determined that the inverse-tapered design is necessary for high [Al] containing p-n junction devices as any valence band discontinuity at will limit vertical hole transport and induce larger voltage-drop across structure. The fabricated ultraviolet MQW DH can sustain DC current of least 500 mA pulsed 1.07 A, which corresponds to density 10 18 kA/cm $^{2}$ maximum measured voltage 15 20 V with series resistance 11 $\Omega $ , respectively.
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