Green Electroluminescence from Gallium Phosphide Diodes near Room Temperature

摘要: Detailed spectral properties of green near‐bandgap electroluminescence have been studied between ∼50° and ∼380°K in several GaP diodes containing different concentrations nitrogen impurities. The observed evolution the room‐temperature bands from readily identifiable low‐temperature a comparison spectrum with intrinsic luminescence band calculated absorption‐edge show that transitions are minor importance for these near 300°K. lightly doped is identified recombination bound free excitons induced by isoelectronic impurities, whereas radiative holes at neutral shallow donor centers predominates heavily diodes. intensity generally increased more rapidly than red Zn, O acceptor‐donor pair 300°K, both increase temperature diode current. We external efficiencies approaching 10−4 exciton room exceptional relatively low deep (notably those oxygen content). rate constant largest mean minority‐carrier lifetimes together suggest efficiency might be observable currently attainable minimal if not confined to junction depletion layer.