Thermally tunable and omnidirectional terahertz photonic bandgap in the one-dimensional photonic crystals containing semiconductor InSb

摘要: Thermally tunable and omnidirectional terahertz (THz) photonic bandgaps in the one-dimensional crystals composed of alternating layers semiconductor material InSb dielectric SiO2 are studied theoretically. This bandgap is strongly dependent on lattice constants thickness ratio constituent layers. It found that lower-order gap invariant constants, but higher-order gaps all sensitive to constants. Moreover, band-edges shift lower frequency as increasing ratio. Additionally, Gap II also angle-independent, can occur range. Omnidirectional bandwidth for both polarizations about 1.5 THz at 220 K. Most important all, be tuned by controlling external temperature, which results from dependence plasma temperature. As t...