CuO nanowires for inhibiting secondary electron emission
作者： L Aguilera , I Montero , M E Dávila , A Ruiz , L Galán
DOI: 10.1088/0022-3727/46/16/165104
关键词: Copper oxide 、 Aspect ratio (image) 、 Yield (engineering) 、 Secondary electrons 、 Range (particle radiation) 、 Nanowire 、 Copper 、 Materials science 、 Analytical chemistry 、 Secondary emission
摘要: Copper oxide nanowires (NWs) grown on copper to avoid the secondary electron emission were investigated. Optimal temperatures for NW growth found be in range 700–800 K. surface coverage of 102 µm−2 is required strongly reduce yield. A total coefficient below 1 was obtained aspect ratio higher than 103.
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