Secondary Ion Mass Spectrometry, SIMS

摘要: Secondary ion mass spectrometry (SIMS) is based on the ejection of charged atomic and molecular species from surface a solid sample when it bombarded by stream heavy particles. J. Thomson1 first observed this phenomenon in 1910. Later Arnot Milligan2 investigated secondary emission resulting positive bombardment. Herzog Viehboeck3 provided basis modern SIMS instrumentation, using an electron impact primary source 1949. Other pioneers field constructed their own unique instruments.4, 5, 6, 7 The commercial system derived Herzog’s work8 was intended for geochemical analysis extraterrestrial material captured during early years outer space exploration. Since that time, has become indispensable tool characterization semiconductor components materials. Its ability to detect all elements periodic table, excellent elemental sensitivity inherent depth profiling capabilities make appropriate choice number critical needs. Dopant profiling, mobile monitoring, process contamination diagnosis, thin film characterization, interface are just few areas where can contribute root cause determination microelectronics failures. In addition utilization as diagnosis failures, technique very powerful aid optimization processes, preventing Typical applications preventive mode include evaluation effectiveness cleaning monitoring new processing tools wafer levels implant matching studies technology transfer between fabrication sites.