Medium-energy ion scattering studies of interfaces in ultrathin oxide films

作者: Tian Feng

DOI: 10.7282/T3474900

关键词: IonOxideNanotechnologyScatteringMedium energyMaterials science

摘要:

参考文章(83)
James D. Plummer, Michael Deal, Peter B. Griffin, Silicon VLSI Technology: Fundamentals, Practice and Modeling ,(2000)
High k Gate Dielectrics Taylor & Francis. ,(2003) , 10.1201/9781420034141
Robert F. Pierret, Semiconductor device fundamentals Addison-Wesley. ,(1996)
S. T. Picraux, Leonard C. Feldman, James W. Mayer, Materials Analysis by Ion Channeling: Submicron Crystallography ,(2012)
Howard R. Huff, D.C. Gilmer, High dielectric constant materials : VLSI mosfet applications Springer. ,(2005)
D. A. Muller, T. Sorsch, S. Moccio, F. H. Baumann, K. Evans-Lutterodt, G. Timp, The electronic structure at the atomic scale of ultrathin gate oxides Nature. ,vol. 399, pp. 758- 761 ,(1999) , 10.1038/21602
Torgny Gustafsson, Medium Energy Ion Scattering for Near Surface Structure and Depth Profiling Ion Beams in Nanoscience and Technology, Particle Acceleration and Detection. pp. 153- 167 ,(2009) , 10.1007/978-3-642-00623-4_11
Gert Moliere, Theorie der Streuung schneller geladener Teilchen I. Einzelstreuung am abgeschirmten Coulomb-Feld Zeitschrift für Naturforschung A. ,vol. 2, pp. 133- 145 ,(1947) , 10.1515/ZNA-1947-0302
Materials Fundamentals of Gate Dielectrics Materials Fundamentals of Gate Dielectrics. Edited by A. A. Demkov and A. Navrotsky. Berlin: Springer. ,(2005) , 10.1007/1-4020-3078-9