NANOMETER-SCALE RECORDING ON CHALCOGENIDE FILMS WITH AN ATOMIC FORCE MICROSCOPE

摘要: A nanometer‐scale recording technique has been demonstrated on an amorphous GeSb2Te4 film with atomic force microscope (AFM). Data are recorded by locally changing the electrical property of a conductive AFM probe. The conductance is able to be increased more than one hundred times applying pulse voltage between probe and film. data read detecting change simultaneous measurement topographic images shows that surface topography regions not changed during process. smallest region 10 nm in diameter, which corresponds storage density 1 Tbit/cm2.