In situ real-time monitoring of profile evolution during plasma etching of mesoporous low-dielectric-constant SiO2
作者： Henry Gerung , C. Jeffrey Brinker , Steven R. J. Brueck , Sang M. Han
DOI: 10.1116/1.1865154
关键词: Attenuated total reflection 、 Infrared spectroscopy 、 Plasma etching 、 Permittivity 、 Absorbance 、 Etching (microfabrication) 、 Inductively coupled plasma 、 Materials science 、 Analytical chemistry 、 Dielectric
摘要: We have employed attenuated total reflection Fourier transforms infrared spectroscopy (ATR-FTIRS) to monitor the profile evolution of patterned mesoporous, low-dielectric-constant SiO2 films in situ and real time during plasma etching. A stack photoresist, anti-reflective coating, mesoporous is etched an inductively coupled reactor, using CHF3 Ar. During etching, IR absorbance Si–O–Si stretching modes near 1080cm−1 decreases, rate decrease translates removal rate. When corrected for exponentially decaying evanescent electric field, helps predict final etch profile. The predicted profiles are excellent agreement with cross-sectional images taken by scanning electron microscopy. In a similar approach, we calculate absolute number C–F bonds sidewall passivation observe its formation as function time. Assuming that th...
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