Improving the performance of the feedback charge capacitance–voltage method

作者: I Thurzo , D R T Zahn , K Gmucov , A K Dua

DOI: 10.1088/0957-0233/14/7/325

关键词: Dynamic rangeOptoelectronicsSemiconductor deviceElectrical engineeringTransient voltage suppressorCapacitanceFrequency domainMaterials scienceIntegratorLeakage (electronics)Schottky diode

摘要: The feedback charge capacitance–voltage method (FCM) (Mego 1986 Rev. Sci. Instrum. 58 2798) is a pure time-domain technique originally used for measuring the quasi-static capacitance of semiconductor devices. based on processing output charge-to-voltage converter in response to double-step (pulse) excitation device. Using transient voltage processor comprising three gated integrators connected mixing unit, steady-state (leakage) current may be source severe experimental error capacitance. First, there parasitic during pulse that causes an sampling baseline while activating first channel aperture finite duration Δt. Second, any uncompensated leakage present after leads increment representing what called conduction loss frequency domain. Measures taken towards minimizing both errors are provided, simultaneous action active compensation and second-order filtering. A simple hardware solution optimizing dynamic range FCM under provided. non-instrumental with constant dielectric diamond thin films, due anomalous kinetics j(t) ∝ t−1 current, analysed. latter inaccuracy assessing instantaneous (geometrical) diamond-based Schottky diodes. proper gating suggested removal predicted error.

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