Non-volatile semiconductor memory device with high voltage generator
作者： Yoshihisa Sugiura , Sumio Tanaka , Kenichi Imamiya , Yoshihisa Iwata , Junichi Miyamoto
DOI:
关键词: Voltage droop 、 Electronic engineering 、 Bandgap voltage reference 、 Dropout voltage 、 Electrical engineering 、 Voltage source 、 Transient recovery voltage 、 Engineering 、 Voltage divider 、 Booster (electric power) 、 Voltage regulation
摘要: Disclosed is a semiconductor integrated circuit device, which comprises booster for boosting source voltage, voltage limiter having one end connected to the output terminal of circuit, limiting given value, and setting other limiter, arbitrarily adjusting at limiter. This design can keep constant level set that an arbitrary voltage.
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