Growth of heteroepitaxial ZnO thin films by femtosecond pulsed-laser deposition
作者： E. Millon , O. Albert , J. C. Loulergue , J. Etchepare , D. Hulin
DOI: 10.1063/1.1324679
关键词: Thin film 、 Sapphire 、 Optical microscope 、 Materials science 、 Deposition (law) 、 Femtosecond 、 Nanosecond 、 Optoelectronics 、 Optics 、 Epitaxy 、 Pulsed laser deposition
摘要: ZnO thin films have been grown on various substrates by femtosecond pulsed-laser deposition. According to optical microscopy and atomic force analyses, the production of droplets is not significant using pulses. Smooth, dense, stoichiometric, crystalline, textured hexagonal are epitaxially (0001) sapphire at 700 °C with an in-plane epitaxial relationship corresponding a 30° rotation basal plane respect sapphire. Nevertheless, channeling experiments rocking curve measurements show that crystalline quality as good obtained nanosecond
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