Multiple wavelength InGaAs quantum dot lasers using selective area epitaxy
作者： S. Mokkapati , H. H. Tan , C. Jagadish
DOI: 10.1063/1.2731729
关键词: Selective area epitaxy 、 Semiconductor laser theory 、 Quantum dot laser 、 Optoelectronics 、 Metalorganic vapour phase epitaxy 、 Band gap 、 Quantum well 、 Materials science 、 Laser 、 Quantum dot
摘要: The authors demonstrate multiple wavelength lasers fabricated from InGaAs quantum dots. Selective area epitaxy is used to grow the active region, consisting of five layer stack dots with different band gap energies in selected regions substrate, for fabrication lasers. mechanism responsible engineering discussed. performance selectively grown compared structures a standard, nonselective growth process.
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