raman and photoluminescence spectroscopy of lowtemperature heterostructures alGaas/Gaas(100)
作者： V. Glotov
DOI:
关键词: Materials science 、 Luminescence 、 Spectroscopy 、 Nanoclusters 、 Acceptor 、 Raman spectroscopy 、 Solid solution 、 Heterojunction 、 Analytical chemistry 、 Photoluminescence
摘要: Methods of Raman backscattering and photoluminescence spectroscopy allowed to study substructure luminescence epitaxial low temperature MOCVD AlGaAs/GaAs (100) heterostructures . It is shown, that experimental data received during work correlate with results the structural optical researches accomplished in previous The assumption at high concentration a carbon acceptor atoms concentrate on defects crystal lattice AlGaAs solid solution formation nanoclusters confirmed
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