Room temperature ferromagnetism in (In1-xNix)2O3 thin films
作者： N. Sai Krishna , S. Kaleemulla , G. Amarendra , N. Madhusudhana Rao , C. Krishnamoorthi
DOI: 10.1016/J.PHYSB.2015.03.014
关键词: Oxygen 、 X-ray photoelectron spectroscopy 、 Dopant 、 Exchange interaction 、 Thin film 、 Condensed matter physics 、 Ferromagnetism 、 Electron beam physical vapor deposition 、 Crystallite 、 Analytical chemistry 、 Materials science
摘要: Abstract Polycrystalline (In1−xNix)2O3 thin films (x=0.00, 0.03, 0.05 and 0.07) were deposited on glass substrates by electron beam evaporation technique. The effect of Ni concentration composition, structural magnetic properties was studied. Increment in the does increase oxygen vacancies ferromagnetic strength films. X-ray photoelectron spectroscopy (XPS) studies indicate dopant exists (II) state In2O3 host. Ferromagnetism attributed to intrinsic nature sample rather than any secondary phases exist observed ferromagnetism exchange interaction between Ni2+ ions via single free trapped vacancy. Increase with lead such an vacancy mediated pairs resulting concentration.
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