System and method for determining the logic state of a memory cell in a magnetic tunnel junction memory device
作者： Frederick A. Perner , Anthony Holden
DOI:
关键词: Physics 、 Reference cell 、 Electrical engineering 、 Voltage 、 Logic state 、 Tunnel magnetoresistance 、 Value (computer science) 、 Current (fluid) 、 Memory cell
摘要: A system and method for determining the logic state of a memory cell in magnetic tunnel junction (MTJ) device based on ratio current through at different bias points are disclosed. an MJT is sequentially subjected to least two voltages. The each voltages measured, currents determined. then compared with predetermined value determine cell. can be known value. Alternatively, determined by application reference having state.
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