Edge Restenosis After Implantation of High Activity 32 P Radioactive β-Emitting Stents

作者: Remo Albiero , Takahiro Nishida , Milena Adamian , Antonio Amato , Marco Vaghetti

DOI: 10.1161/01.CIR.101.21.2454

关键词: Initial activityNuclear medicineBalloon injuryOstiumAngioplastyHigh activityRestenosisStentMedicineSurgeryBalloon

摘要: Background—A high restenosis rate has been reported at the edges (“edge restenosis”) of 32P radioactive stents with an initial activity level 3 to 12 μCi. This edge effect might be due balloon injury and a low dose radiation stent margins. The aim this study was evaluate whether implantation higher (12 21 μCi) combined nonaggressive strategy could solve problem restenosis. Methods Results—We compared results lesions treated single BX μCi (group 2, n=54 lesions) by 1, n=42 lesions). There were no procedural events. At 6-month follow-up, myocardial infarctions, deaths, or thromboses had occurred. Intrastent binary 0% in group 1 versus 4% 2 (n=2, both ostium right...

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