High-energy multi-kilohertz Ho-doped regenerative amplifiers around 2 µm.
作者： Lorenz von Grafenstein , Martin Bock , Uwe Griebner , Thomas Elsaesser
DOI: 10.1364/OE.23.014744
关键词: Doping 、 Regenerative amplification 、 High energy 、 Pulse duration 、 Active laser medium 、 Amplifier 、 Optics 、 Power (physics) 、 Optoelectronics 、 Broadband 、 Materials science
摘要: We report a high-gain, cw-pumped regenerative amplifier which is based on Ho-doped crystals and seeded by versatile broadband source emitting between 2050 2100 nm. The implemented in chirped-pulse amplification system operating at room temperature. Using Ho:YLF as gain medium, 1.1 mJ pulses with 50 ps pulse duration 10 kHz repetition rate are generated 2060 nm, corresponding to an average power of 11 W. the same seed source, Ho:YAG 2090 nm studied configuration. In all cases parameters chosen operate tunable single-energy regime without instabilities.
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