Memory switching of ZnGa2Te4 thin films
作者： GB Sakr , SS Fouad , IS Yahia , DM Abdel Basset
DOI: 10.1007/S10853-012-6850-Z
关键词: Crystallite 、 Phase-change material 、 Amorphous solid 、 Phase-change memory 、 Diffraction 、 Analytical chemistry 、 Crystallography 、 Chalcopyrite 、 Thin film 、 Materials science 、 Joule heating
摘要: Electrical and switching property of amorphous defect chalcopyrite ZnGa2Te4 thin films prepared by thermal evaporation technique has been studied. The elemental chemical compositions the bulk as well as-deposited film were determined means energy dispersive X-ray spectrometry. diffraction pattern revealed that powder compound is polycrystalline annealed at ta ≤ 548 K have phase, while t ≥ 573 are with a single phase structure similar to synthesized material. great advantage this material capability appear in two different phases, crystalline rather electrical properties. Both dynamic static I–V characteristics phenomenon 601 nm investigated. threshold mechanism was explained model switching, i.e., joule heating an electrically conducting channel. good candidate change memory device.
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