Gain and Current Relations
作者：
DOI: 10.1002/9781118148167.CH4
关键词: Electrical engineering 、 Current (fluid) 、 Materials science
摘要:
sci-hub.st 参考文章(31)
M. E. Heimbuch, A. L. Holmes, C. M. Reaves, M. P. Mack, S. P. Denbaars, L. A. Coldren, Tertiarybutylarsine and tertiarybutylphosphine for the MOCVD growth of low threshold 1.55 mm In x Ga 1−x As/InP quantum-well lasers Journal of Electronic Materials. ,vol. 23, pp. 87- 91 ,(1994) , 10.1007/BF02655251
E. Yablonovitch, C. J. Sandroff, R. Bhat, T. Gmitter, Nearly ideal electronic properties of sulfide coated GaAs surfaces Applied Physics Letters. ,vol. 51, pp. 439- 441 ,(1987) , 10.1063/1.98415
L. Jastrzebski, J. Lagowski, H. C. Gatos, Application of scanning electron microscopy to determination of surface recombination velocity: GaAs Applied Physics Letters. ,vol. 27, pp. 537- 539 ,(1975) , 10.1063/1.88276
SY Hu, SW Corzine, K‐K Law, DB Young, AC Gossard, LA Coldren, JL Merz, None, Lateral carrier diffusion and surface recombination in InGaAs/AlGaAs quantum‐well ridge‐waveguide lasers Journal of Applied Physics. ,vol. 76, pp. 4479- 4487 ,(1994) , 10.1063/1.357279
Seigo Tarucha, Hideki Kobayashi, Yoshiji Horikoshi, Hiroshi Okamoto, Carrier-Induced Energy-Gap Shrinkage in Current-Injection GaAs/AlGaAs MQW Heterostructures Japanese Journal of Applied Physics. ,vol. 23, pp. 874- 878 ,(1984) , 10.1143/JJAP.23.874
J. Camassel, D. Auvergne, H. Mathieu, Temperature dependence of the band gap and comparison with the threshold frequency of pure GaAs lasers Journal of Applied Physics. ,vol. 46, pp. 2683- 2689 ,(1975) , 10.1063/1.321903
Seoung-Hwan Park, Crystal Orientation Effects on Many-Body Optical Gain of Wurtzite InGaN/GaN Quantum Well Lasers Japanese Journal of Applied Physics. ,vol. 42, pp. 170- ,(2003) , 10.1143/JJAP.42.L170
Masumi Takeshima, Auger recombination in InAs, GaSb, InP, and GaAs Journal of Applied Physics. ,vol. 43, pp. 4114- 4119 ,(1972) , 10.1063/1.1660882
B. El Jani, P. Gibart, J. C. Portal, R. L. Aulombard, Effective masses in Sn‐doped Ga1−xAlxAs (x<0.33) determined by the Shubnikov–de Haas effect Journal of Applied Physics. ,vol. 58, pp. 3481- 3484 ,(1985) , 10.1063/1.335771
Hongping Zhao, Ronald A. Arif, Nelson Tansu, Self-consistent gain analysis of type-II ‘W’ InGaN–GaNAs quantum well lasers Journal of Applied Physics. ,vol. 104, pp. 043104- ,(2008) , 10.1063/1.2970107