Electron-beam writing of deoxygenated micro-patterns on graphene oxide film
作者： Kuang-Hsu Wu , Han-Hao Cheng , Ali Amdad Mohammad , Idriss Blakey , Kevin Jack
DOI: 10.1016/J.CARBON.2015.08.116
关键词: Graphene 、 Thin film 、 Proximity effect (electron beam lithography) 、 Fabrication 、 Cathode ray 、 Lithography 、 Optics 、 Electron 、 Optoelectronics 、 Oxide 、 Materials science
摘要: Electron-beam (e-beam) lithography at a low energy can efficiently write deoxygenated micro-patterns on graphene oxide (GO) films with high edge-definition. The deoxygenation caused by the secondary process of back-scattered electrons leads to shrinkage pattern height. A lower e-beam is found be more effective in deoxygenating GO than that using higher e-beam. thickness and oxygen-to-carbon atomic ratio are strongly related decreases progressively increasing electron dosage before reaching steady level. In addition, as dose increases patterned area also expanded lateral direction. observations proximity effect justified our results Monte Carlo simulation trajectories. These guideline for fabrication all-carbon thin film electronics.
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