作者: Bernard Gelloz , Firman Bagja Juangsa , Tomohiro Nozaki , Koji Asaka , Nobuyoshi Koshida
关键词: Luminescence 、 Materials science 、 Oxide 、 Quantum yield 、 Anodizing 、 Optoelectronics 、 Passivation 、 Porous silicon 、 Annealing (metallurgy) 、 Silicon
摘要: Most of the highly efficient luminescent silicon nanocrystals (SiNCs) reported to date consists organically capped cores. Here, we report a method obtaining Si/SiO2 core/shell nanoparticles emitting at peak energy 1.5 eV with very high quantum yields (53-61%). The same led ~ 30% for porous powder 1.9 eV. SiNCs were stable under continuous excitation several hours. lifetime was over 232 μs, longest ever SiNCs, consistent luminescence efficiency. first fabricated by non-thermal plasma synthesis or anodization in case silicon. Then, thin oxide shell (~ 1 nm) grown using high-pressure water vapor annealing. This oxidation process allows growth good quality low defect concentration and stress, resulting surface passivation, which explains obtained.