Multilayer technique for fabricating Nb junction circuits exhibiting charging effects
作者： A. B. Pavolotsky , Th. Weimann , H. Scherer , V. A. Krupenin , J. Niemeyer
DOI: 10.1116/1.590504
关键词: Electronic circuit 、 Transistor 、 Niobium 、 Fabrication 、 Optoelectronics 、 Coulomb blockade 、 Reactive-ion etching 、 Electrode 、 Chemical-mechanical planarization 、 Materials science
摘要: A reliable process has been developed for the fabrication of all Nb single-electron circuits, based on spin-on glass planarization. The steps are in situ growth Nb/AlOx/Nb sandwich, definition patterns junctions, base electrodes, and wiring by use reactive ion etching planarization a insulation between electrode wiring. transistor made 0.3×0.3 μm2 area junctions clearly shows e-periodic Coulomb blockade modulation voltage applied to gate.
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