Room-temperature low-threshold low-loss continuous-wave operation of 2.26 μm GaInAsSb/AlGaAsSb quantum-well laser diodes
作者： C. Mermelstein , S. Simanowski , M. Mayer , R. Kiefer , J. Schmitz
DOI: 10.1063/1.1308537
关键词: Diode 、 Optical cavity 、 Gallium arsenide 、 Optoelectronics 、 Materials science 、 Quantum well laser 、 Current density 、 Optics 、 Semiconductor laser theory 、 Continuous wave 、 Laser
摘要: Strained single- and triple-quantum-well (SQW TQW), large optical cavity GaInAsSb/AlGaAsSb/GaSb laser diodes emitting at 2.26 μm are investigated. Internal loss coefficients as low 5 7.7 cm−1 for the SQW TQW, respectively, relatively high internal quantum efficiencies of 65% (SQW) 69% (TQW) were obtained. Extrapolated threshold current densities infinite lengths 55 150 A/cm2 have been deduced respectively. These values scale very well with number QWs among lowest reported diode lasers in this wavelength range. A differential efficiency 50% a total power 23% achieved 280 K. The temperature dependence density revealed characteristic 110 Single-ended output powers 240 mW continuous-wave mode exceeding 0.5 W pulsed operation obtained TQW high-reflection/antireflection coated facets K, mounte...
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