Specimen preparation technique for high resolution transmission electron microscopy studies on model supported metal catalysts

作者: J. W. M. Jacobs , J. F. C. M. Verhoeven

DOI: 10.1111/J.1365-2818.1986.TB02768.X

关键词: Analytical chemistryWaferHigh-resolution transmission electron microscopyCrystalliteTransmission electron microscopyThin filmMonolayerElectron microscopeSiliconChemistry

摘要: SUMMARY A new technique is described which can be used for preparing transmission electron microscopy (TEM) specimens suitable high resolution studies on supported metal catalysts. By conventional silicon processing techniques 200 × μm2 Si3N4 membranes Si wafers are produced. These extremely flat and have a uniform thickness of 13 nm. They as support in various kinds thin film deposition. A TiO2 film, optimally structured with respect to the requirements TEM work TiO2–metal cluster systems, deposited layer. It consists one monolayer 10–25 nm crystallites. lattice images show that line down 0.19 possible. Examples TiO2–Pd TiO2–Rh given using respectively photodeposition impregnation reduction produce l.5–4 clusters.

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