Tips for scanning tunneling microscopy produced by electron-beam-induced deposition

摘要: Abstract Using contamination writing, we produced tips for scanning tunneling microscopy employing a JEOL 840F field emission electron microscope at various acceleration voltages. Single-spot deposition experiments rendered fine of aspect ratios up to 90 growth rate 0.1–1 μm per minute. Tip shank diameters below 200 nm were obtained. Full cone angles and length the varied with voltage. Experiments using focused beam 2 7 diameter, having power density 60 MW/cm energies 30 kV, full 50° 9° lengths 100 1200 nm, respectively. The most important parameter tip, its radius, was found be independent energy amounted 10 nm. Our method is well suited routinely producing geometry required image deep depressions high steps higher resolution than can obtained electrochemically etched tips. STM revealed sufficient conductivity deposited